By Topic

Power semiconductor ratings under transient and intermittent loads

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gutzwiller, F. W. ; General Electric Company, Auburn, N. Y. ; Sylvan, T. P.

Methods for rating semiconductor power rectifiers and controlled rectifiers under steady-state conditions are well established and accepted. These techniques assume uniform temperature across the entire semiconductor junction area and limit this temperature under different load and ambient conditions to a predetermined level consistent with good performance and high reliability.1,2Supplementary methods for determining junction temperature under transient and intermittent loads are necessary for such applications as motor-starting and lamp-dimming controls,3 and for calculations involving other types of overload duty on semiconductor equipment. This paper discusses methods of handling these intermittent duty types of applications. Examples illustrate suggested techniques for determining the peak junction temperature under various kinds of intermittent loading.

Published in:

American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the  (Volume:79 ,  Issue: 6 )