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Solid state: Integrated circuits: The case for gallium arsenide: This superfast semiconductor holds great promise for high-speed computers, and manufacturing difficulties are now beginning to be overcome

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3 Author(s)
Richard C. Eden ; Gigabit Logic Inc., Newbury Park, CA, USA ; Anthony R. Livingston ; Bryant M. Welch

A discussion is presented of fabrication technologies for manufacturing GaAs devices. Advantages and drawbacks of heterojunction devices are outlined. Areas of concern in GaAs production lines are also examined. The discussion covers the depletion-mode metal-semiconductor field-effect transistor (D-MESFET), the enhancement-mode MESFET (E-MESFET), and the high-electron-mobility transistor (HEMT).

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IEEE Spectrum  (Volume:20 ,  Issue: 12 )