By Topic

Solid state: Integrated circuits: The case for gallium arsenide: This superfast semiconductor holds great promise for high-speed computers, and manufacturing difficulties are now beginning to be overcome

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Eden, R.C. ; Gigabit Logic Inc., Newbury Park, CA, USA ; Livingston, A.R. ; Welch, B.M.

A discussion is presented of fabrication technologies for manufacturing GaAs devices. Advantages and drawbacks of heterojunction devices are outlined. Areas of concern in GaAs production lines are also examined. The discussion covers the depletion-mode metal-semiconductor field-effect transistor (D-MESFET), the enhancement-mode MESFET (E-MESFET), and the high-electron-mobility transistor (HEMT).

Published in:

Spectrum, IEEE  (Volume:20 ,  Issue: 12 )