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Large-scale, computer-aided thermal design of power GaAs integrated devices and circuits

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4 Author(s)
F. Bonani ; Dept. of Electron., Politecnico di Torino, Italy ; G. Ghione ; M. Pirola ; C. U. Naldi

A three-dimensional large-scale thermal simulation tool is applied to the design of power III-V devices and integrated circuits (ICs). After a short description of the modelling approach, which allows for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations, simulation examples are discussed concerning GEC-Marconi power MESFETs with improved heat sinking and power ICs.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Date of Conference:

16-19 Oct. 1994