Referenced Items are not available for this document.
A three-dimensional large-scale thermal simulation tool is applied to the design of power III-V devices and integrated circuits (ICs). After a short description of the modelling approach, which allows for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations, simulation examples are discussed concerning GEC-Marconi power MESFETs with improved heat sinking and power ICs.
Published in:
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Date of Conference: 16-19 Oct. 1994
- Page(s):
- 141 - 144
- ISSN :
- 1064-7775
- Print ISBN:
- 0-7803-1975-3
- INSPEC Accession Number:
- 5098934
- Conference Location :
- Phildelphia, PA, USA
- Digital Object Identifier :
- 10.1109/GAAS.1994.636951
- Product Type:
- Conference Publications
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