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Wafer fab line yield improvement at TriQuint semiconductor

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1 Author(s)
Smith, T.M. ; TriQuint Semicond. Inc., Beaverton, OR, USA

This paper describes TriQuint's yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned, and the results achieved from 1989 to present.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Date of Conference:

16-19 Oct. 1994