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60-GHz HEMT-based MMIC receiver with on-chip LO

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4 Author(s)
T. Saito ; Adv. Millimeter Wave Technol. Co. Ltd., Kawasaki, Japan ; N. Hidaka ; Y. Ohashi ; Y. Aoki

Using InGaP-InGaAs-GaAs technology, we designed, fabricated, and evaluated a 60-GHz fully integrated HEMT-based MMIC receiver. The receiver consists of a four-stage low-noise amplifier (LNA) and a single-balanced active-gate mixer, a 60 GHz local oscillator (LO), and a buffer amplifier for the LO. The HEMTs in the receiver have gates 0.1 /spl mu/m long and 100 /spl mu/m wide. The receiver had a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain was 20 dB at 62.2 GHz. The noise figure of the receiver was less than 6 db for IF frequencies between 100 MHz and 1 GHz for a 61.536 GHz LO, and the minimum noise figure was 49 dB at 1 GHz IF.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Date of Conference:

16-19 Oct. 1994