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The recent development of the first truly high-power silicon transistor and the demand for high-efficiency, regulated, solid-state power supplies have stimulated interest in silicon-transistor-magnetic-amplifier combinations. Apart from the usual ability of silicon devices to survive a higher temperature than their germanium counterparts, the new transistors, due to the high-voltage ratings and low internal losses, can control considerably more power than contemporary silicon units. These devices have proved to be extremely rugged and are virtually comparable with magnetic amplifiers in that respect. Thus, to all the advantages which have already been attributed to transistor-inverter-high-frequency magnetic-amplifier systems, it is now possible to attach the valuable qualities of silicon power transistors.