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High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene

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12 Author(s)
Ou-Yang, W. ; The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan ; Uemura, T. ; Miyake, K. ; Onish, S.
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High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 22 )

Date of Publication:

Nov 2012

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