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High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application

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8 Author(s)
Sheng-Hsien Liu ; Program of Electr. & Commun. Eng., Feng Chia Univ., Taichung, Taiwan ; Wen-Luh Yang ; Chi-Chang Wu ; Tien-Sheng Chao
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In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between highand low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (>; 105) and superior endurance (>; 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

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Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )