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Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

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2 Author(s)
Munteanu, D. ; IM2NP, France ; Autran, J.L.

The response to heavy-ion irradiation of FinFET and Multi-Channel Nanowire MOSFET (MC-NWFET) operated with independent gates is investigated by 3-D numerical simulation. The bipolar amplification and charge collection of devices with independent gates are particularly investigated and compared to those of conventional devices having a single surrounding gate. We show that the independent-gate operation of both FinFET and MC-NWFET degrades the device immunity to heavy-ion irradiation.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 6 )