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Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops

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11 Author(s)
Amy V. Kauppila ; Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA ; Bharat L. Bhuva ; T. D. Loveless ; S. Jagannathan
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Negative bias temperature instability has been experimentally demonstrated to increase the cross-section of the single event response for 40 nm flip-flops. Analysis on the underlying mechanisms, including threshold voltage shift, is presented.

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IEEE Transactions on Nuclear Science  (Volume:59 ,  Issue: 6 )