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Measured heavy-ion induced current transients are compared for two different junction contact schemes (dumbbell and saddle) in bulk FinFETs. Devices with saddle contacts collect 17% less charge than their counterparts with dumbbell contacts. Transient shunt effects are observed in both bulk and SOI FinFETs with saddle contacts. SOI FinFETs with saddle contacts collect twice as much charge as that generated in the fin. The substrate bias has a large effect on the SOI devices, with the maximum amounts of charge collected when the substrate is negatively biased.