Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center

Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements.