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Improved 1.3- \mu{\rm m} Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature

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4 Author(s)
Wei-Hsun Lin ; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan ; Kai-Wei Wang ; Shih-Yen Lin ; Meng-Chyi Wu

Room-temperature 1.3-μm electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-μm emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range.

Published in:

IEEE Photonics Technology Letters  (Volume:25 ,  Issue: 1 )