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GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate

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5 Author(s)
Chung-Ying Chang ; Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan, Taiwan ; Shoou-Jinn Chang ; C. H. Liu ; Shuguang Li
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We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

Published in:

IEEE Photonics Technology Letters  (Volume:25 ,  Issue: 1 )