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Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs With Different Quantum Barrier Thickness

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7 Author(s)
Wang, C.K. ; Dept. of Electron. Eng., Southern Taiwan Univ. of Sci. & Technol., Tainan, Taiwan ; Chiang, T.H. ; Chen, K.Y. ; Chiou, Y.Z.
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The effect of temperature-dependent electroluminescence (EL) on nitride-based light-emitting diodes (LEDs) with different thicknesses of quantum barrier are studied and demonstrated. It was found that quantum confined stark effect (QCSE) of 6-nm thick barrier was more slightly than that of 9- and 12-nm thick barrier. The results indicated that the polarization field is independent of ambient temperature due to no clearly change of blue-shift value. The results also pointed out that the polarization field within the active region of 12-nm thick barrier was stronger than the others due to larger variation of the wavelength transition position (i.e. blue-shift change to red-shift) from 300 to 350 K, and thus it needed more injection carriers to complete the screening of QCSE. In this study, we reported a simple method to provide useful comparison of electrostatic fields within active region in nitride-based LEDs, specifically for structures consisting of identical active regions with different barrier thicknesses.

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Display Technology, Journal of  (Volume:9 ,  Issue: 4 )