By Topic

Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Gomez, Alfonso ; Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, University of Valladolid, 47011 Valladolid, Spain ; Castan, Helena ; Garcia, Hector ; Duenas, Salvador
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this work, the electrical characterization of Gd2O3 and Sc2O3-based metal–insulator–silicon (MIS) structures has been performed using capacitance–voltage, deep level transient spectroscopy, conductance transients, flat-band voltage transients, and current–voltage techniques. High-k films were deposited by high pressure sputtering using Sc and Gd metallic films in a pure Ar plasma and, subsequently, in situ room temperature plasma oxidation in a mixed Ar/O2 atmosphere was performed. Three different metals were used as gate electrodes: aluminium, platinum, and titanium, in order to check electrical differences of the samples and to check the interface scavenging after high-k dielectric deposition. In particular, it was proved that Ti electrode is a well SiO2 interlayer scavenger for both materials. Additionally, the authors observed that the predominant conduction mechanism for these high-k based-MIS structures is Poole–Frenkel emission, as usually reported for high-k dielectrics.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 1 )