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An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic force microscopy based micromechanical bending test

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6 Author(s)
Lu, Yen-Sheng ; Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan ; Hsieh, Chih-Hung ; Gwo, Shangjr ; Hou, Max T.
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High quality single-crystalline wurtzite indium nitride (InN) thin film was first demonstrated to have a Young's modulus of 149 ± 5 GPa along a-axis using atomic force microscopy microbending test since the revision of InN energy gap. These released InN cantilever beams were examined to have ignorable in-plane residual stress using micro-Raman spectroscopy, where the E2 (high) mode at 490 cm-1 exists zero shift because of the perfect lattice match (8:9 commensurate) between InN and underneath aluminum nitride buffer. The experimental value of Young's modulus agrees well with a number of theoretical estimations ranging from 146 to 159 GPa.

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Applied Physics Letters  (Volume:101 ,  Issue: 22 )