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HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design

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7 Author(s)
Miyake, M. ; Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashihiroshima, Japan ; Navarro, D. ; Feldmann, U. ; Mattausch, H.J.
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A physics-based compact model of insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation is presented. The compact model is constructed as a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) part and a bipolar junction transistor (BJT) part with a conductivity-modulated base resistance in between them and is named “HiSIM-IGBT.” The model considers the potential distribution from the MOSFET channel to the two BJT junctions explicitly by solving important internal node potentials self-consistently. The IGBT output current at the collector terminal is governed by the base resistance of the bipolar part and the MOSFET characteristics, which is confirmed to be described accurately. The model is verified to accurately reproduce measured transient behaviors of switching test circuits which are basic components of practically used power electronic circuits.

Published in:

Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 2 )