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Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With f_{T}/f_{\rm MAX} = \hbox {450/510} \hbox {GHz}

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5 Author(s)
Huiming Xu ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Iverson, E.W. ; Chi-Chih Liao ; Cheng, K.Y.
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A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/fMAX = 450/510 GHz for a 0.3 × 2 μm2 device.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )