By Topic

Analysis of Failure Mechanisms and Extraction of Activation Energies (E_{a}) in 21-nm nand Flash Cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kyunghwan Lee ; Interuniv. Semicond. Res. Center & the Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea ; Myounggon Kang ; Seongjun Seo ; Dong Hua Li
more authors

In this letter, we point out the methodological problem of the conventional temperature-accelerated life-test method of nand Flash memory. We confirm that the generally assumed Arrhenius law is inconsistent with extrapolation of data-retention time-to-failure of nand Flash memory since several failure mechanisms come up together. For the first time, we completely separated three main failure mechanisms and extracted each activation energy (Ea) in 21-nm nand Flash memory. From the results, we assured that each failure mechanism follows the Arrhenius law. In order to estimate the lifetime of nand Flash memory accurately, each failure mechanism should be considered.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )