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Design of a Multifunctional Double-Active-Layer Thin-Film Transistor for Photosensing Applications

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5 Author(s)
Sang Youn Han ; LCD R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea ; Kyung Sook Jeon ; Seung Mi Seo ; Mi Seon Seo
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Photocurrent generation from infrared and thin-film transistor (TFT) driving properties were simultaneously achieved with a hydrogenated amorphous silicon/a-SiGe:H double-active-layer structure. The proposed double layer showed electrical performance degradation due to the large series resistance from the thick active structure. By reducing the thickness of a-SiGe:H only in the driving TFT, a compatible field-effect mobility of 0.29 cm2/V·s was achieved, which can fully drive the TFT. In the photosensor TFT, a higher photosensitivity was obtained with a thick a-SiGe:H layer. This implies that the multifunctional double active layer and new process effectively realized the two different properties at the same time.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )