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Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

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6 Author(s)
J. L. Autran ; Institute of Materials, Microelectronics and Nanosciences of Provence (IM2NP, UMR CNRS 7334), Aix-Marseille University and CNRS, Marseille Cedex 13, France ; S. Serre ; S. Semikh ; D. Munteanu
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The interactions of thermal and low energy ( <;1 MeV) neutrons with natural boron-doped silicon has been investigated using Geant4 numerical simulations. The consequences of these interactions on the soft-error rate of 40 nm SRAM at ground level have been carefully analyzed and quantified from thermal neutron accelerated tests at LLB facility, real-time altitude measurements on the ASTEP platform and numerical simulation using a new version of the TIARA Monte-Carlo code (TIARA-G4) capable of taking into account a more accurate description of the SRAM geometry and the true isotopic composition of circuit materials from silicon to back-end-of-line levels.

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IEEE Transactions on Nuclear Science  (Volume:59 ,  Issue: 6 )