By Topic

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Autran, J.L. ; Inst. of Mater., Microelectron. & Nanosci. of Provence (IM2NP), Aix-Marseille Univ., Marseille, France ; Serre, S. ; Semikh, S. ; Munteanu, D.
more authors

The interactions of thermal and low energy ( <;1 MeV) neutrons with natural boron-doped silicon has been investigated using Geant4 numerical simulations. The consequences of these interactions on the soft-error rate of 40 nm SRAM at ground level have been carefully analyzed and quantified from thermal neutron accelerated tests at LLB facility, real-time altitude measurements on the ASTEP platform and numerical simulation using a new version of the TIARA Monte-Carlo code (TIARA-G4) capable of taking into account a more accurate description of the SRAM geometry and the true isotopic composition of circuit materials from silicon to back-end-of-line levels.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 6 )