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Fabrication, Novel Morphology, and Field Emission Properties of \hbox {Ga}_{2}\hbox {O}_{3}/\hbox {In}_{2}\hbox {O}_{3} Core-Shell Nanowires

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4 Author(s)
Cheng-Liang Hsu ; Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan ; Shin Liu ; Tsung-Ying Tsai ; Kuan-Chao Chen

Ga2O3/In2O3 core-shell nanowires (NWs) have a structure in which quadrangular In2O3 nanoflakes surround Ga2O3 NWs. The XRD peak of Ga2O3/In2 O3 core-shell NWs shifts to a higher angle as Ga3+ impurity, which has a smaller radius than In3+, is added. Photoluminescence observations reveal that In2O3 red emission was shifted to infrared by Ga doping. The low-threshold electric field of Ga2O3/In2 O3 core-shell NWs is only 1.9 V/μm, which is enhanced by the nanoscale quadrangular flake morphology.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )