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Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Source/Drain Regions Doped by Implanted Arsenic

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5 Author(s)
Rongsheng Chen ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Wei Zhou ; Meng Zhang ; Man Wong
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Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm2/V·s, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and on/off current ratio of 9 ×107.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )