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Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C V Measurement

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8 Author(s)
Hagyoul Bae ; Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea ; Hyunjun Choi ; Oh, S. ; Dae Hwan Kim
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We report a technique for extraction of the intrinsic subgap density of states (gA,int(E)) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length LOV between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (Cpar,S/Cpar,D) are considered under dark and subbandgap photonic states. We obtained gA,int(E) as a superposition of the exponential deep and tail states with NTA,int = 6.0 × 1016 eV-1·cm-3, kTTA,int = 0.16 eV,NDA,int = 1.8 × 1015 eV-1 · cm-3, and kTDA,int = 1.9 eV from samples with various parasitic areas.

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Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )