By Topic

Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Hsieh, Tien-Yu ; Department of Physics, National Sun Yat-sen University, 70 Lien-hai Rd., Kaohsiung 80424, Taiwan ; Chang, Ting-Chang ; Chen, Te-Chih ; Chen, Yu-Chun
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4767912 

In-cell touch sensor that can be integrated with display pixel circuit using dual gate InGaZnO thin-film transistor is proposed. Under bottom gate operation, device characteristics are not sensitive to light illumination. On the contrary, light can lead to evident subthreshold leakage when operated with top gate. This behavior allows touch sensor to be realized by sensing the ambient light using top gate operation, without affecting normal bottom gate operated devices in display pixel. Further, the proposed operation method of touch sensor needs no additional fabrication and cost, and even black matrix is not required either.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 21 )