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Model and measurements of a transmission line with integrated symmetrical 1-kV HBM broadband ESD Protection in advanced CMOS technologies

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6 Author(s)
Lim, T. ; STMicroelectron., Crolles, France ; Jimenez, J. ; Benech, P. ; Fournier, J.
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Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents an ESD solution and model able to be implemented in an I/O pad to protect RFICs in advanced CMOS technologies.

Published in:

Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International

Date of Conference:

24-26 Sept. 2012