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High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes

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5 Author(s)
Qiugui Zhou ; ECE Dept., Univ. of Virginia, Charlottesville, VA, USA ; Cross, A. ; Yang Fu ; Beling, A.
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Modified uni-traveling carrier (MUTC) photodiodes with diameter of 28 μm and 20 μm flip-chip bonded on AlN substrate demonstrated RF output power of 25 dBm and 19 dBm at 25 GHz and 30 GHz, respectively.

Published in:

Photonics Conference (IPC), 2012 IEEE

Date of Conference:

23-27 Sept. 2012

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