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Temperature distribution measurement by using a single-shot normal incidence imaging ellipsometer scheme

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3 Author(s)
D. Tserendolgor ; Power Engineering School of Mongolian University of Science and Technology, Mongolia ; Byung Joon Baek ; Daesuk Kim

In this paper, we describe a new application for the temperature distribution measurement by using a single-shot normal incidence imaging ellipsometer based on polarized dual-reference wave scheme. The object was a chromium nanopattern mask printed on the silicon wafer. The recorded off-axis hologram is processed to obtain an object wave (amplitude and phase) for each polarization state separately. The reconstructed phase maps for each polarization state are subtracted. Phase difference map has the capability of reconstructing object phase image in the region of the nanopattern, which is dependent from the temperature distribution in real time and has been found to be a constant value map in the region of the silicon wafer. The results obtained by this technique were compared with those measured by conventional scheme based on an off-axis digital holography in order to evaluate the measurement accuracy. Comparison results shows that this experimental setup is high sensitive to the temperature distribution measurement and has a moderate linear relationship between the measured phase and temperature distribution of the object. We expect that the proposed system can provide a very reliable and fast solution in various surface temperature distribution measurement applications.

Published in:

Strategic Technology (IFOST), 2012 7th International Forum on

Date of Conference:

18-21 Sept. 2012