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Gas-phase silicon etching with bromine trifluoride

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4 Author(s)
Xuan-Qi Wang ; Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA ; Xing Yang ; Walsh, K. ; Yu-Chong Tai

We report the first study of gas phase silicon micromachining using pure bromine trifluoride (BrF3) gas at room temperature. This work includes both the design of a new apparatus and etching characterization. Consistent etching results and high molecular etching efficiency (80%) have been achieved by performing the etching in a controlled pulse mode. This pure gaseous BrF3 etching process is isotropic and has a high etch rate with superb selectivity over silicon dioxide (3000:1), silicon nitride (400-800:1) and photoresist (1000:1). Moreover, gaseous BrF3 etching has also been demonstrated in surface micromachining process, where silicon nitride channels and membranes using polysilicon as the sacrificial layer have been successfully fabricated

Published in:

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on  (Volume:2 )

Date of Conference:

16-19 Jun 1997