Cart (Loading....) | Create Account
Close category search window

Structure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Li, Y. ; State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People''s Republic of China ; Pan, X.H. ; Zhang, Y.Z. ; He, H.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A series of 10-period ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) with well widths varying from 2.2 to 5.6 nm have been grown on r-plane sapphire substrates by pulsed laser deposition. A good periodic structure with clear interfaces was observed by transmission electron microscopy. In a-plane ZnO/Zn0.9Mg0.1O MQWs, the luminescence was dominated by localized exciton emissions at low temperatures, while the free exciton (FE) transition was dominating emissions at temperatures above 100 K. The thermal quenching behavior of exciton emission has been analyzed. A rate equation assuming two nonradiative recombination channels is used to describe the quenching of the transitions observed. Moreover, the FE emission energy in the MQWs shows a systematic blueshift with decreasing well width, which is consistent with a quantum confinement effect.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 10 )

Date of Publication:

Nov 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.