Referenced Items are not available for this document.
This paper shows how to use silicon pressure sensors for high temperature and silicon corrosive environments. A sensor chip has been developed to be used in high temperature up to 300°C, which has SOI (Silicon On Insulator) structure employing Si/Al2O3/Si double hetero-epitaxial technology[1]. The sensor chip is covered with a stainless diaphragm, and never contact with media of pressure. In experiments, a pressure sensor which is designed for a range of 1 MPa has a sensitivity of 18.3 mV/V/MPa. After compensating of the temperature influence, a maximum offset error of 1.3%F.S., and a maximum sensitivity error of 1.1%F.S. from 50°C to 200°C were obtained
Published in:
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
(Volume:2
)
Date of Conference: 16-19 Jun 1997
- Page(s):
- 1481 - 1484 vol.2
- Meeting Date :
- 16 Jun 1997-19 Jun 1997
- Print ISBN:
- 0-7803-3829-4
- INSPEC Accession Number:
- 5773813
- Conference Location :
- Chicago, IL
- Digital Object Identifier :
- 10.1109/SENSOR.1997.635745
- Product Type:
- Conference Publications
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