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A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact Models

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3 Author(s)
Navarro, D. ; SILVACO Japan Co., Ltd., Yokohama, Japan ; Sano, T. ; Furui, Y.

A sequential parameter extraction technique describing the fitting targets and related parameters for compact insulated-gate bipolar transistor (IGBT) models is presented. Using 2-D device simulation data for a trench-type IGBT as reference, the performance of HiSIM-IGBT as an example of a compact IGBT model is compared to an IGBT macromodel. Parameter extraction with the compact model is fast and straightforward, owing to its physics-based modeling. Even with minimal extraction effort, the compact model fits the dc current and capacitance and reproduces the transient turnoff characteristics accurately.

Published in:

Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 2 )