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Direct Band-to-Band Tunneling in Reverse Biased  \hbox {MoS}_{2} Nanoribbon p-n Junctions

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2 Author(s)
Ghosh, R.K. ; Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India ; Mahapatra, S.

We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum disulfide (MoS2) nanoribbon p-n junction by analyzing the complex band structure obtained from semiempirical extended Hückel method under relaxed and strained conditions. It is demonstrated that the direct BTBT is improbable in relaxed monolayer nanoribbon; however, with the application of certain uniaxial tensile strain, the material becomes favorable for it. On the other hand, the relaxed bilayer nanoribbon is suitable for direct BTBT but becomes unfavorable when the applied uniaxial tensile or compressive strain goes beyond a certain limit. Considering the Wentzel-Kramers-Brillouin approximation, we evaluate the tunneling probability to estimate the tunneling current for a small applied reverse bias. Reasonably high tunneling current in the MoS2 nanoribbons shows that it can take advantage over graphene nanoribbon in future tunnel field-effect transistor applications.

Published in:

Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 1 )

Date of Publication:

Jan. 2013

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