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I V Characteristics of Antiparallel Resistive Switches Observed in a Single \hbox {Cu/TaO}_{x}\hbox {/Pt} Cell

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4 Author(s)
Tong Liu ; Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Verma, M. ; Yuhong Kang ; Orlowski, M.K.

A Cu/TaOx/Pt resistive cell can transition from a high-resistance state to a low-resistance state by applying positive or negative set voltages. The set operation with positive bias is due to the electrochemical formation of a Cu conductive filament (CF), whereas the set operation with negative bias is attributed to the electroreduction of solid electrolyte and formation of an oxygen vacancy VOCF. Both CFs can be reset by Joule heating. Since set voltages of the VOCF have higher absolute values than those of the Cu CF, the switching based on Cu and VO CFs can be decoupled within the same device. The device is inherently an antiparallel resistive switch circuit that can be consecutively switched between the Cu and VOCFs.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )