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Extraction method for non-quasi-static gate resistance of RF MOSFETs

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2 Author(s)
Lee, H.-J. ; Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea ; Lee, S.

Using a new extraction method based on the physical input equivalent circuit separating the overlap component from the gate capacitance, the non-quasi-static gate resistance in a small-signal RF MOSFET model is accurately determined. This new method results in much better agreements up to 30GHz between the measured and modelled data of Y11+Y12 than a conventional one.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 23 )

Date of Publication:

November 8 2012

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