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Ratio-Based Temperature-Sensing Technique Hardened Against Nanometer Process Variations

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2 Author(s)
Ituero, P. ; Dept. of Electron. Eng., Univ. Politec. de Madrid, Madrid, Spain ; Lopez-Vallejo, M.

This letter presents a temperature-sensing technique on the basis of the temperature dependency of MOSFET leakage currents. To mitigate the effects of process variation, the ratio of two different leakage current measurements is calculated. Simulations show that this ratio is robust to process spread. The resulting sensor is quite small-0.0016 mm2 including an analog-to-digital conversion-and very energy efficient, consuming less than 640 pJ/conversion. After a two-point calibration, the accuracy in a range of 40°C-110°C is less than 1.5°C , which makes the technique suitable for thermal management applications.

Published in:

Sensors Journal, IEEE  (Volume:13 ,  Issue: 2 )