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A Comparison of High-Energy Electron and Cobalt-60 gamma-Ray Radiation Testing

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10 Author(s)
Casey, M.C. ; NASA Goddard Space Flight Center (GSFC), Greenbelt, MD, USA ; Boutte, A.J. ; Campola, M.J. ; Carts, M.A.
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In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors.

Published in:

Radiation Effects Data Workshop (REDW), 2012 IEEE

Date of Conference:

16-20 July 2012