By Topic

Improved Quantum Efficiency in Green InGaN Light-Emitting Diodes With InGaN Barriers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jih-Yuan Chang ; Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan ; Yi-An Chang ; Fang-Ming Chen ; Yih-Ting Kuo
more authors

The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In0.2Ga0.8N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

Published in:

Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 1 )