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A superjunction Schottky barrier diode with trench metal-oxide-semiconductor (MOS) structure (TM-SJ-SBD) is proposed and studied by 2-D numerical simulations. The device shows the decreasing leakage current, as compared with the common superjunction Schottky barrier diode (SJ-SBD), without considerable degradation of forward characteristics. With optimized parameters, the TM-SJ-SBD attains a breakdown voltage of 178 V, which is similar to that of the SJ-SBD, and a leakage current of 1.57 × 10-5 A/cm2 at 130-V reverse bias, which is 46.5% smaller than that of the SJ-SBD. In addition, the TM-SJ-SBD achieves softer reverse recovery characteristics, and the reverse recovery peak current is 67.9% smaller than that of the SJ-SBD.