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We report the fabrication and characterization of A2RAM capacitorless memory cell on silicon-on-insulator (SOI). Holes and electrons are separated in two superposed p- and n-channel regions. The retrograde p-n doping in a 36-nm-thick body has been successfully tailored by epitaxial regrowth, without any alteration of the CMOS/SOI process. We document the detailed device operation and its attractive performance in terms of current margin, retention time, and variability.