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In the field of silicon photonics, it has only recently become possible to build complex systems. As system power constraints and complexity increase, design margins will decrease - making understanding device noise performance and device-specific noise origins increasingly necessary. We demonstrate a waveguide-coupled germanium metal-semiconductor-metal photodetector exhibiting photoconductive gain with a responsivity of 1.76 A/W at 5 V bias and 10.6±0.96 fF capacitance. Our measurements indicate that a significant portion of the dark current is not associated with the generation of shot noise. The noise elbow at 5 V bias is measured to be approximately 150 MHz and the high-frequency detector noise reaches the Johnson noise floor.