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An Analytical Charge Model for Double-Gate Tunnel FETs

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4 Author(s)
Lining Zhang ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Xinnan Lin ; Jin He ; Mansun Chan

An analytical charge model for double gate (DG) tunnel FETs (TFETs) is proposed. By splitting the TFET into a series combination of a gated tunnel diode and a DG MOSFET, we solved the Poisson equation with matching boundary conditions to obtain a surface potential model for the DG TFET. Based on that, the source depletion charge and the mobile channel charge are derived. Comparisons between the proposed model and TCAD simulations show good agreements and suggest a 100/0 drain/source channel inversion charge partition. Terminal capacitances calculated based on the proposed charge model are also evaluated and show good agreement with TCAD simulations.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )