By Topic

Reduced-Order Parametric Behavioral Model for Digital Buffers/Drivers With Physical Support

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dghais, W. ; Dept. de Eletron., Telecomun. e Inf., Univ. de Aveiro, Aveiro, Portugal ; Cunha, T.R. ; Pedro, J.C.

In this paper, we present a new behavioral model for high-speed digital output buffers/drivers. In the conceived model, the output current's relationship with the output voltage is expressed as a summation of a static nonlinearity plus linear dynamics. This separation in the model format is supported by the measurements as well as the physical structure of a general driver circuit. This approach merges the features of equivalent circuit and parametric approaches to build a reduced-order parametric behavioral model which, compared to other published models, is more adequate to describe the device's electrical behavior from transient input-output data. A simple single-step identification procedure is conceived to extract a model that proved to be stable and capable of significantly improving the simulation speed and accuracy of prediction. Finally, the resulting model is validated in a realistic signal integrity simulation setup, and is compared to transistor-level models and to the state-of-the-art input-output buffer information specification model.

Published in:

Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:2 ,  Issue: 12 )