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Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types

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8 Author(s)
Lin, Chun-Cheng ; Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan ; Tseng, Zong-Liang ; Lo, Kuang-Yao ; Huang, Chih-Yu
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The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. % Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 20 )

Date of Publication:

Nov 2012

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