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Single Germanium Quantum-dot Placement Along With Self-Aligned Electrodes for Effective Management of Single Charge Tunneling

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4 Author(s)
Inn-Hao Chen ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Kuan-Hung Chen ; Wei-Ting Lai ; Pei-Wen Li

We demonstrated the controlled placement of a Ge quantum dot (QD) along with tunnel-junction engineering in a self-organized approach for the effective management of single charge tunneling. In this approach, a single-Ge-QD ( ~ 11 nm) self-aligning with nickel-polycide electrodes is realized by thermally oxidizing a SiGe nanorod that bridges a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bilayer of Si3N4/SiO2. The fabricated Ge-QD single-hole transistor exhibits clear Coulomb oscillation and Coulomb diamond behaviors at T = 77 K-150 K, providing a way to analyze the electronic structure of the Ge QD.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )

Date of Publication:

Dec. 2012

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