Referenced Items are not available for this document.
A laser-scribing process without any mask and photolithography is developed for transparent junctionless oxide based in-plane-gate thin-film transistor (TFT) fabrication at room temperature. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same thin indium-zinc-oxide films. Good electrical performance with an Ion/Ioff ratio of 4 × 105, a field-effect mobility of 15 cm2/V · s, and a subthreshold swing of 0.12 V/dec is obtained. AND logic is realized with a reliable logic operation in a dual in-plane-gate configuration. The developed laser-scribing technology is highly desirable in terms of the low-cost fabrication process.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
12
)
Date of Publication: Dec. 2012
- Page(s):
- 1723 - 1725
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13136616
- Digital Object Identifier :
- 10.1109/LED.2012.2219492
- Product Type:
- Journals & Magazines
- Date of Publication :
- 15 November 2012
- Date of Current Version :
- 22 November 2012
- Issue Date :
- Dec. 2012
- Sponsored by :
- IEEE Electron Devices Society
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