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A laser-scribing process without any mask and photolithography is developed for transparent junctionless oxide based in-plane-gate thin-film transistor (TFT) fabrication at room temperature. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same thin indium-zinc-oxide films. Good electrical performance with an Ion/Ioff ratio of 4 × 105, a field-effect mobility of 15 cm2/V · s, and a subthreshold swing of 0.12 V/dec is obtained. AND logic is realized with a reliable logic operation in a dual in-plane-gate configuration. The developed laser-scribing technology is highly desirable in terms of the low-cost fabrication process.