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\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz

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12 Author(s)
Khalid, A. ; Sch. of Eng., Univ. of Glasgow, Glasgow, UK ; Li, C. ; Papageogiou, V. ; Dunn, G.M.
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We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3- μm active channel length, the highest power achieved was approximately -10 dBm at 164 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )

Date of Publication:

Jan. 2013

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