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High quality AlN epilayers were grown on SiC substrates using double layer AlN buffers growth method by metal organic chemical vapor deposition and exploited as active deep ultraviolet optoelectronic materials through the demonstration of AlN Schottky barrier photodetectors. The grown AlN epilayers have smooth surfaces, low etch-pit density, narrow width of x-ray rocking curves, and strong band edge photoluminescence emission with low impurity emissions. AlN Schottky photodetectors are shown to possess outstanding features including extremely low dark current and high breakdown voltage.