By Topic

Terahertz detector arrays in a high-performance SiGe HBT technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hadi, R.A. ; IHCT, Univ. of Wuppertal, Wuppertal, Germany ; Grzyb, J. ; Heinemann, B. ; Pfeiffer, U.

This paper presents heterojunction bipolar transistor (HBT) based terahertz power detectors implemented in a 0.25-μm SiGe process technology. The detectors have been arranged in a 3 × 5-pixel FPA and characterized at 0.65 THz. Referred to the collecting aperature of a 3-mm diameter lens, a maximum current responsivity RI of 0.79 A/W and a minimum noise equivalent power NEP of 370 pW/√Hz have been measured at a 1-kHz chopping frequency.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Date of Conference:

Sept. 30 2012-Oct. 3 2012