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This paper presents heterojunction bipolar transistor (HBT) based terahertz power detectors implemented in a 0.25-μm SiGe process technology. The detectors have been arranged in a 3 × 5-pixel FPA and characterized at 0.65 THz. Referred to the collecting aperature of a 3-mm diameter lens, a maximum current responsivity RI of 0.79 A/W and a minimum noise equivalent power NEP of 370 pW/√Hz have been measured at a 1-kHz chopping frequency.
Date of Conference: Sept. 30 2012-Oct. 3 2012